insulated gate bipolar transistor

The system adopted insulated gate bipolar transistor ( IGBT) as its main circuit and pulse-width modulating ( PWM) technology.

该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。

Insulated Gate Bipolar Transistor ( IGBT ) as controllable switch, has been applied widely.

绝缘栅双极二级管 ( IGBT ) 作为一种可控开关, 获得了广泛应用.

In recent years the Insulated Gate Bipolar Transistor ( IGBT) has been widely used in modern power electronic technology.

近些年，绝缘栅双极型晶体管（IGBT）在现代电力电子技术中应用广泛。

The implementation of this method is also studied. Simulation model of IGBT ( Insulated Gate Bipolar Transistor) series resonant inverter based on MATLAB/ Simulink is established.

以MATLAB／Simulink为仿真工具，建立了以IGBT（绝缘栅双极型晶体管）为开关器件的串联型逆变器仿真模型，对提出的定角控制方法进行了仿真验证。

The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.

本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。

The high speed insulated gate bipolar transistor ( IGBT) transport model is derived by ambipolar transport theory in this paper.

借助双极传输理论导出了高速绝缘栅双极晶体管（IGBT）传输特性的物理模型。

A method to simulate the characteristics of insulated gate bipolar transistor ( IGBT) with PSPICE program is proposed in this paper.

提出了一种用PSPICE程序模拟绝缘栅双极型晶体管（IGBT）特性的方法。